集成多芯片模塊

          Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
          DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50.0 38.8 40.5 28.0 Released Product
          DF1G0015-08N LGA 4mm×4mm 20~1500 8.0 39.4 59.4 17.2 Engineering Sample
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          DXG2MH50A-50N*


          Brief description for the product

          DXG2MH50A-50N*

          DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          2496

          MHz

          Frequency (Max.)

          2690

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat (Typ.)

          49.9

          dBm

          Power Gain @ 2600 MHz

          15.9

          dB

          Efficiency @ 2600 MHz

          56.5

          %

          ACPR @ 2600 MHz-32.5dBc


          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


          DF1G0015-08N


          Brief description for the product

          DF1G0015-08N

          DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz. 

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          20

          MHz

          Frequency (Max.)

          1500

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat@325 MHz

          39.7

          dBm

          Power Gain @ 325 MHz

          17.5

          dB

          Efficiency @ 325 MHz

          63.8

          %


          Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.


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