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          Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
          DF2G0007-16N DFN 6mm×5mm 30~700 16.0 40.5 67.0 18.8 Engineering Sample
          DF1G0010-16N DFN 6mm×5mm 20~1000 16.0 40.6 55.0 12.6 Engineering Sample
          DXG1PH60B-10N2* DFN 4mm×4mm DC~6000 10.0 34.0 32.0 20.0 Released Product
          DXG1PH22A-120N* DFN 7mm×10mm 1805~2170 50.8 42.3 55.5 14.6 Released Product
          DXG2PH27A-100N* DFN 7mm×6.5mm 2496~2690 49.9 41.3 56.5 15.9 Released Product
          DXG2PH36A-70N* DFN 7mm×6.5mm 3300~3800 48.1 39.3 53.5 15.4 Released Product
          DXG2PH36A-100N* DFN 7mm×6.5mm 3300~3800 50.2 41.3 54.3 15.8 Released Product
          DXG2PH50B-20N* DFN 4mm×4.5mm 4400~5000 42.8 47.8 37.0 16.0 In Development
          DXG2PH50A-90N* DFN 7mm×6.5mm 4800~5000 49.6 41.3 48.3 12.5 In Development
          DXG2PH60B-14N* DFN 4mm×4.5mm DC~6000 42.2 / 41.8 15.4 Released Product
          DXG1PH60P-40N DFN 7mm×6.5mm DC~6000 46.3 33.0 31.7 21.3 Released Product
          DXG1PH60P-60N* DFN 7mm×6.5mm DC~6000 47.8 40.0 55.0 19.5 Released Product
            112

          DF2G0007-16N


          Brief description for the product

          DF2G0007-16N

          DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          30

          MHz

          Frequency (Max.)

          700

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat @325MHz 

          41.1

          dBm

          Power Gain @ 325 MHz

          19.4

          dB

          Efficiency @ 325 MHz

          69.5

          %


          Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm,Pulse width = 100 μs, Duty cycle = 10 %.


          DF1G0010-16N


          Brief description for the product

          DF1G0010-16N

          DF1G0010-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          20

          MHz

          Frequency (Max.)

          1000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat @325MHz (Typ.)

          41.2

          dBm

          Power Gain @ 325 MHz

          15

          dB

          Efficiency @ 325  MHz

          72

          %


          Note: Measured in the DF1G0010-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Input signal is CW

          DXG1PH60B-10N2*


          Brief description for the product

          DXG1PH60B-10N2*

          DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          DC

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat (Typ.)

          40.3

          dBm

          Power Gain @ 3500 MHz

          20.2

          dB

          Efficiency @ 3500 MHz

          32.3

          %


          Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.


          DXG1PH22A-120N*


          Brief description for the product

           DXG1PH22A-120N*

          DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.

          Operating Characteristics

          ParameterValueUnit
          Frequency (Min.)1805MHz
          Frequency (Max.)2170MHz
          Supply Voltage (Typ.)48V
          Psat (Typ.) 50.8dBm
          Power Gain @ 2110 MHz14.6dB
          Efficiency @ 2110 MHz55.5%
          ACPR @ 2100 MHz-35.0dBc

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


          DXG2PH27A-100N*


          Brief description for the product

          DXG2PH27A-100N*

          DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz. 


          Operating Characteristics

          ParameterValueUnit
          Frequency (Min.)2496MHz
          Frequency (Max.)2690MHz
          Supply Voltage (Typ.)48V
          Psat (Typ.) 49.9dBm
          Power Gain @ 2600 MHz15.9dB
          Efficiency @ 2600 MHz56.5%
          ACPR @ 2600 MHz-32.5dBc

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


          DXG2PH36A-70N*


          Brief description for the product

          DXG2PH36A-70N*

          DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.


          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          3300

          MHz

          Frequency (Max.)

          3800

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat (Typ.)

          48.1

          dBm

          Power Gain @ 3500 MHz

          15.4

          dB

          Efficiency @ 3500 MHz

          53.5

          %

          ACPR @ 3500 MHz-31.0dBc

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


          DXG2PH36A-100N*


          Brief description for the product

          DXG2PH36A-100N*

          DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          3300

          MHz

          Frequency (Max.)

          3800

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat (Typ.)

          50.2

          dBm

          Power Gain @ 3500 MHz

          15.8

          dB

          Efficiency @ 3500 MHz

          54.3

          %

          ACPR @ 3500 MHz

          -32.0

          dBC

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

          DXG2PH50B-20N*


          Brief description for the product

          DXG2PH50B-20N*

          DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.

          Operating Characteristics

          ParameterValueUnit
          Frequency (Min.)4400MHz
          Frequency (Max.)5000MHz
          Supply Voltage (Typ.)48V
          Psat (Typ.) 42.8dBm
          Power Gain @ 4900 MHz16.0dB
          Efficiency @ 4900 MHz47.8%

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA,  Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

          DXG2PH50A-90N*


          Brief description for the product

          DXG2PH50A-90N*

          DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.


          Operating Characteristics

          ParameterValueUnit
          Frequency (Min.)4800MHz
          Frequency (Max.)5000MHz
          Supply Voltage (Typ.)48V
          Psat (Typ.) 49.6dBm
          Power Gain @ 4880 MHz12.5dB
          Efficiency @ 4880 MHz48.3%
          ACPR @ 4880 MHz-32.0dBc

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

          DXG2PH60B-14N*


          Brief description for the product

          DXG2PH60B-14N*

          DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat (Typ.)

          42.2

          dBm

          Power Gain @ 3500 MHz

          15.4

          dB

          Efficiency @ 3500 MHz

          41.8

          %

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

          DXG1PH60P-40N


          Brief description for the product

          DXG1PH60P-40N

          DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

          applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          DC

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat (Typ.)

          46.3

          dBm

          Power Gain @ 1842 MHz

          21.3

          dB

          Efficiency @ 1842 MHz

          31.7

          %

          ACPR @ 1842 MHz

          -41.0

          dBc


          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

           


          DXG1PH60P-60N*


          Brief description for the product

          DXG1PH60P-60N*

          DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

          applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          DC

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat (Typ.)

          47.8

          dBm

          Power Gain @  1842   MHz

          19.5

          dB

          Efficiency  @    1842   MHz

          55.0

          %

          ACPR @   1842   MHz

          -30.0

          dBC

          Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


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