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| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DXG2MH50A-50N* | LGA 6mm×10mm | 4700~5000 | 50.0 | 38.8 | 40.5 | 28.0 | Released Product | |
| DF1G0015-08N | LGA 4mm×4mm | 20~1500 | 8.0 | 39.4 | 59.4 | 17.2 | Engineering Sample |
DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2496 | MHz |
Frequency (Max.) | 2690 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 49.9 | dBm |
Power Gain @ 2600 MHz | 15.9 | dB |
Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 20 | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat@325 MHz | 39.7 | dBm |
Power Gain @ 325 MHz | 17.5 | dB |
Efficiency @ 325 MHz | 63.8 | % |
Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.
