陶封分立功放管

          Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
          DF2G5060-140EF2 780P2 5000~6000 140 50.5 54.2 9.5 Engineering Sample
          DF2G4460-50DF2 360F1 4400~6000 50.0 47.7 60.8 8.9 Engineering Sample
          DF2G4460-30DF2 360F1 4400~6000 30.0 45.5 58.9 9.2 Engineering Sample
          DF2H0014-350EF 780P2 DC~1400 350 55.8 67.0 18.2 Engineering Sample
          DF2G1020-120CF 400P1 1000~2000 120 51.0 69.0 19.3 Engineering Sample
          DF2G0060-25DF 200F1 DC~6000 25.0 45.7 78.0 12.8 Engineering Sample
          DF2G0040-35DF 360F1 DC~4000 35.0 47.2 67.2 14.2 Engineering Sample
          DF2G0040-45DF 360F1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
          DF2G0026-330FF 650F2 DC~2600 330 53.1 74.6 15.1 Engineering Sample
          DF2G0030-180FF 650F2 DC~3000 180 51.6 81.0 16.4 Engineering Sample
          DF2G0030-120DF 360F1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
          DF2G0040-90DF 360F1 DC~4000 90.0 51.0 80.6 14.8 Engineering Sample
          DF2G0060-10DF 200F1 DC~6000 10.0 42.1 77.2 17.5 Engineering Sample
          DXG1CH59B-30DF 360F1 5000~6000 35.0 55.0 30.0 16.0 Released Product
          DF2G0040-45CF 360P1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
          DF2G0030-120CF 360P1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
          DF2H0026-650FF 650F2 DC~2600 650 56.0 62.9 24.5 Engineering Sample
          DF2H0014-175DF 400F1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
          DF2H0014-175CF 400P1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
          DF1H0015-900EF 780P2 DC~1500 900 58.7 74.5 17.4 Engineering Sample

          DF2G5060-140EF2


          Brief description for the product

          DF2G5060-140EF2

          DF2G5060-140EF2 is a 140 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          5000

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat @ 5000 MHz

          50.5

          dBm

          Power Gain @ 5000 MHz

          9.7

          dB

          Efficiency @ 5000 MHz

          63.3

          %


          Note: Measured in the DF2G5060-140EF2 application circuit, test condition: VDS = 28 V, IDQ = 100 mA.



          DF2G4460-50DF2


          Brief description for the product

          DF2G4460-50DF2

          DF2G4460-50DF2 is a 50 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          4400

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat @ 5700 MHz

          48.1

          dBm

          Power Gain @ 5700 MHz

          9.4

          dB

          Efficiency @ 5700 MHz

          61.0

          %


          Note: Measured in the DF2G440-50DF2 application circuit, test condition: VDS = 28 V, IDQ = 400 mA.


          DF2G4460-30DF2


          Brief description for the product

          DF2G4460-30DF2

          DF2G4460-30DF2 is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          4400

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat @ 5500 MHz

          46.0

          dBm

          Power Gain @ 5500 MHz

          9.5

          dB

          Efficiency @ 5500 MHz

          66.6

          %


          Note: Measured in the DF2G440-30DF2 application circuit, test condition: VDS = 28 V, IDQ = 200 mA,



          DF2H0014-350EF


          Brief description for the product

          DF2H0014-350EF

          DF2H0014-350EF is a 350 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          1400

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat1 @ 990 MHz

          55.8

          dBm

          Power Gain2 @ 990 MHz

          18.2

          dB

          Efficiency2@ 990 MHz

          67

          %


          Note: Measured in the DF2H0014-350DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

          1. The output power is saturated power.

          2. Test condition: Based on Pout. = 350 W.


          DF2G1020-120CF


          Brief description for the product

          DF2G1020-120CF

          DF2G1020-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1000 to 2000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 1800 MHz

          51

          dBm

          Power Gain2 @ 1800 MHz

          19.3

          dB

          Efficiency2@ 1800 MHz

          69

          %


          Note: Measured in the DF2G1020-120CF application circuit, test condition: VDS = 28 V, IDQ = 450 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0060-25DF


          Brief description for the product

          DF2G0060-25DF

          DF2G0060-25DF is a 25 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 2600 MHz

          45.7

          dBm

          Power Gain2 @ 2600 MHz

          12.8

          dB

          Efficiency2@ 2600 MHz

          78

          %


          Note: Measured in the DF2G0060-25DF application circuit, test condition: VDS = 28 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0040-35DF


          Brief description for the product

          DF2G0040-35DF

          DF2G0040-35DF is a 35 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          4000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 4000 MHz

          47.2

          dBm

          Power Gain2 @ 4000 MHz

          14.2

          dB

          Efficiency2@ 4000 MHz

          67.7

          %


          Note: Measured in the DF2G0040-35DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0040-45DF


          Brief description for the product

          DF2G0040-45DF

          DF2G0040-45DF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          4000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 4000 MHz

          48.2

          dBm

          Power Gain2 @ 4000 MHz

          12.1

          dB

          Efficiency2@ 4000 MHz

          70.6

          %


          Note: Measured in the DF2G0040-45DF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0026-330FF


          Brief description for the product

          DF2G0026-330FF

          DF2G0026-330FF is a 330 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          2600

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 2500 MHz

          53.1

          dBm

          Power Gain2 @ 2500 MHz

          15.1

          dB

          Efficiency2@ 2500 MHz

          74.6

          %


          Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 28 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on one side Maximum Output Power.

          2. Test condition: Based on one side Maximum Drain Efficiency.


          DF2G0030-180FF


          Brief description for the product

          DF2G0030-180FF

          DF2G0030-180FF is a 180 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          3000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 2500 MHz

          51.6

          dBm

          Power Gain2 @ 2500 MHz

          16.4

          dB

          Efficiency2@ 2500 MHz

          81.0

          %


          Note: Measured in the DF2G0030-180FF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0030-120DF


          Brief description for the product

          DF2G0030-120DF

          DF2G0030-120DF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          3000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 2500 MHz

          51.4

          dBm

          Power Gain2 @ 2500 MHz

          15.3

          dB

          Efficiency2@ 2500 MHz

          82.3

          %


          Note: Measured in the DF2G0030-120DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0040-90DF


          Brief description for the product

          DF2G0040-90DF

          DF2G0040-90DF is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          4000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 2500 MHz

          51

          dBm

          Power Gain2 @ 2500 MHz

          11.9

          dB

          Efficiency2@ 2500 MHz

          80.6

          %


          Note: Measured in the DF2G0040-90DF application circuit, test condition: VDS = 28 V, IDQ = 400 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0060-10DF


          Brief description for the product

          DF2G0060-10DF

          DF2G0060-10DF is a 10 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 2600 MHz

          42.1

          dBm

          Power Gain2 @ 2600 MHz

          17.5

          dB

          Efficiency2@ 2600 MHz

          77.2

          %


          Note: Measured in the DF2G0060-10DF application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DXG1CH59B-30DF


          Brief description for the product

          DXG1CH59B-30DF

          DXG1CH59B-30DF is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          5000

          MHz

          Frequency (Max.)

          6000

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat

          55

          dBm

          Power Gain

          16

          dB

          Efficiency

          30

          %


          Note: Measured in the DXG1CH59B-30DF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pavg = 9 W,Pulse width = 100 μs, Duty cycle = 10 %.


          DF2G0040-45CF


          Brief description for the product

          DF2G0040-45CF

          DF2G0040-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          4000

          MHz

          Supply Voltage (Typ.)

          28

          V

          Psat1 @ 4000 MHz

          48.2

          dBm

          Power Gain2 @ 4000 MHz

          12.1

          dB

          Efficiency2@ 4000 MHz

          70.6

          %


          Note: Measured in the DF2G0040-45CF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2G0030-120CF


          Brief description for the product

          DF2G0030-120CF

          DF2G0030-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          3000

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat1 @ 2500 MHz

          51.4

          dBm

          Power Gain2 @ 2500 MHz

          15.3

          dB

          Efficiency2@ 2500 MHz

          82.3

          %


          Note: Measured in the DF2G0030-120CF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. Test condition: Based on Maximum Output Power.

          2. Test condition: Based on Maximum Drain Efficiency.


          DF2H0026-650FF


          Brief description for the product

          DF2H0026-650FF

          DF2H0026-650FF is a 650 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          2600

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat1 @ 678 MHz

          56

          dBm

          Power Gain2 @ 678 MHz

          24.5

          dB

          Efficiency1@ 678 MHz

          62.9

          %


          Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 48 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

          1. The output power is saturated power.

          2. Test condition: Based on rollback gain @ 50 dbm.


          DF2H0014-175DF


          Brief description for the product

          DF2H0014-175DF

          DF2H0014-175DF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          1400

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat1 @ 990 MHz

          52.8

          dBm

          Power Gain2 @ 990 MHz

          18.2

          dB

          Efficiency2@ 910 MHz

          67.0

          %


          Note: Measured in the DF2H0014-175DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

          1. The output power is saturated power.

          2. Test condition: Based on Pout. = 175W.


          DF2H0014-175CF


          Brief description for the product

          DF2H0014-175CF

          DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          1400

          MHz

          Supply Voltage (Typ.)

          48

          V

          Psat1 @ 990 MHz

          52.8

          dBm

          Power Gain2 @ 990 MHz

          18.2

          dB

          Efficiency2@ 910 MHz

          67.0

          %


          Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

          1. The output power is saturated power.

          2. Test condition: Based on Pout. = 175W.


          DF1H0015-900EF


          Operating Characteristics

          Parameter

          Value

          Unit

          Frequency (Min.)

          0

          MHz

          Frequency (Max.)

          1500

          MHz

          Supply Voltage (Typ.)

          50

          V

          Psat @ 910 MHz

          58.7

          dBm

          Power Gain1 @ 910 MHz

          18.6

          dB

          Efficiency1 @ 910 MHz

          68.8

          %


          Note: Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.

          1.Test condition: Based on Pout = 58 dbm.


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