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產(chǎn)品

Part Number	Package	Band(MHz)	Ppeak(W)	Pout(dBm)	Eff@Pout(%)	Power Gain(dB)	Status
DF2G5060-140EF2	780P2	5000~6000	140	50.5	54.2	9.5	Engineering Sample
DF2G4460-50DF2	360F1	4400~6000	50.0	47.7	60.8	8.9	Engineering Sample
DF2G4460-30DF2	360F1	4400~6000	30.0	45.5	58.9	9.2	Engineering Sample
DF2G0007-16N	DFN 6mm×5mm	30~700	16.0	40.5	67.0	18.8	Engineering Sample
DF1G0010-16N	DFN 6mm×5mm	20~1000	16.0	40.6	55.0	12.6	Engineering Sample
DF2H0014-350EF	780P2	DC~1400	350	55.8	67.0	18.2	Engineering Sample
DF2G1020-120CF	400P1	1000~2000	120	51.0	69.0	19.3	Engineering Sample
DF2G0060-25DF	200F1	DC~6000	25.0	45.7	78.0	12.8	Engineering Sample
DF2G0040-35DF	360F1	DC~4000	35.0	47.2	67.2	14.2	Engineering Sample
DF2G0040-45DF	360F1	DC~4000	45.0	48.2	70.6	12.1	Engineering Sample
DF2G0026-330FF	650F2	DC~2600	330	53.1	74.6	15.1	Engineering Sample
DF2G0030-180FF	650F2	DC~3000	180	51.6	81.0	16.4	Engineering Sample
DF2G0030-120DF	360F1	DC~3000	120	51.0	75.9	13.9	Engineering Sample
DF2G0040-90DF	360F1	DC~4000	90.0	51.0	80.6	14.8	Engineering Sample
DF2G0060-10DF	200F1	DC~6000	10.0	42.1	77.2	17.5	Engineering Sample
DXG1CH59B-30DF	360F1	5000~6000	35.0	55.0	30.0	16.0	Released Product
DF2G0040-45CF	360P1	DC~4000	45.0	48.2	70.6	12.1	Engineering Sample
DF2G0030-120CF	360P1	DC~3000	120	51.0	75.9	13.9	Engineering Sample
DF2H0026-650FF	650F2	DC~2600	650	56.0	62.9	24.5	Engineering Sample
DF2H0014-175DF	400F1	DC~1400	175	52.8	67.0	18.2	Engineering Sample

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DF2G5060-140EF2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G5060-140EF2 is a 140 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	5000	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat @ 5000 MHz	50.5	dBm
Power Gain@ 5000 MHz	9.7	dB
Efficiency @ 5000 MHz	63.3	%

Note: Measured in the DF2G5060-140EF2 application circuit, test condition: VDS = 28 V, IDQ = 100 mA.

DF2G4460-50DF2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G4460-50DF2 is a 50 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	4400	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat @ 5700 MHz	48.1	dBm
Power Gain@ 5700 MHz	9.4	dB
Efficiency @ 5700 MHz	61.0	%

Note: Measured in the DF2G440-50DF2 application circuit, test condition: VDS = 28 V, IDQ = 400 mA.

DF2G4460-30DF2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G4460-30DF2 is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	4400	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat @ 5500 MHz	46.0	dBm
Power Gain@ 5500 MHz	9.5	dB
Efficiency @ 5500 MHz	66.6	%

Note: Measured in the DF2G440-30DF2 application circuit, test condition: VDS = 28 V, IDQ = 200 mA,

DF2G0007-16N

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	30	MHz
Frequency (Max.)	700	MHz
Supply Voltage (Typ.)	28	V
Psat @325MHz	41.1	dBm
Power Gain @ 325 MHz	19.4	dB
Efficiency @ 325 MHz	69.5	%

Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm，Pulse width = 100 μs, Duty cycle = 10 %.

DF1G0010-16N

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF1G0010-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	20	MHz
Frequency (Max.)	1000	MHz
Supply Voltage (Typ.)	28	V
Psat @325MHz (Typ.)	41.2	dBm
Power Gain @ 325 MHz	15	dB
Efficiency @ 325 MHz	72	%

Note: Measured in the DF1G0010-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Input signal is CW

DF2H0014-350EF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2H0014-350EF is a 350 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	1400	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 990 MHz	55.8	dBm
Power Gain²@ 990 MHz	18.2	dB
Efficiency²@ 990 MHz	67	%

Note: Measured in the DF2H0014-350DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on Pout. = 350 W.

DF2G1020-120CF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G1020-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1000 to 2000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 1800 MHz	51	dBm
Power Gain²@ 1800 MHz	19.3	dB
Efficiency²@ 1800 MHz	69	%

Note: Measured in the DF2G1020-120CF application circuit, test condition: VDS = 28 V, IDQ = 450 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0060-25DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0060-25DF is a 25 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2600 MHz	45.7	dBm
Power Gain²@ 2600 MHz	12.8	dB
Efficiency²@ 2600 MHz	78	%

Note: Measured in the DF2G0060-25DF application circuit, test condition: VDS = 28 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0040-35DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0040-35DF is a 35 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	4000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 4000 MHz	47.2	dBm
Power Gain²@ 4000 MHz	14.2	dB
Efficiency²@ 4000 MHz	67.7	%

Note: Measured in the DF2G0040-35DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0040-45DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0040-45DF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	4000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 4000 MHz	48.2	dBm
Power Gain²@ 4000 MHz	12.1	dB
Efficiency²@ 4000 MHz	70.6	%

Note: Measured in the DF2G0040-45DF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0026-330FF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0026-330FF is a 330 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	2600	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2500 MHz	53.1	dBm
Power Gain²@ 2500 MHz	15.1	dB
Efficiency²@ 2500 MHz	74.6	%

Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 28 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on one side Maximum Output Power.

2. Test condition: Based on one side Maximum Drain Efficiency.

DF2G0030-180FF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0030-180FF is a 180 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	3000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2500 MHz	51.6	dBm
Power Gain²@ 2500 MHz	16.4	dB
Efficiency²@ 2500 MHz	81.0	%

Note: Measured in the DF2G0030-180FF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0030-120DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0030-120DF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	3000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2500 MHz	51.4	dBm
Power Gain²@ 2500 MHz	15.3	dB
Efficiency²@ 2500 MHz	82.3	%

Note: Measured in the DF2G0030-120DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0040-90DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0040-90DF is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	4000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2500 MHz	51	dBm
Power Gain²@ 2500 MHz	11.9	dB
Efficiency²@ 2500 MHz	80.6	%

Note: Measured in the DF2G0040-90DF application circuit, test condition: VDS = 28 V, IDQ = 400 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0060-10DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0060-10DF is a 10 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2600 MHz	42.1	dBm
Power Gain²@ 2600 MHz	17.5	dB
Efficiency²@ 2600 MHz	77.2	%

Note: Measured in the DF2G0060-10DF application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DXG1CH59B-30DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1CH59B-30DF is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	5000	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	48	V
Psat	55	dBm
Power Gain	16	dB
Efficiency	30	%

Note: Measured in the DXG1CH59B-30DF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pavg = 9 W,Pulse width = 100 μs, Duty cycle = 10 %.

DF2G0040-45CF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0040-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	4000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 4000 MHz	48.2	dBm
Power Gain²@ 4000 MHz	12.1	dB
Efficiency²@ 4000 MHz	70.6	%

Note: Measured in the DF2G0040-45CF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2G0030-120CF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0030-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	3000	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 2500 MHz	51.4	dBm
Power Gain²@ 2500 MHz	15.3	dB
Efficiency²@ 2500 MHz	82.3	%

Note: Measured in the DF2G0030-120CF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.

DF2H0026-650FF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2H0026-650FF is a 650 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	2600	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 678 MHz	56	dBm
Power Gain²@ 678 MHz	24.5	dB
Efficiency¹@ 678 MHz	62.9	%

Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 48 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on rollback gain @ 50 dbm.

DF2H0014-175DF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2H0014-175DF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	1400	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 990 MHz	52.8	dBm
Power Gain²@ 990 MHz	18.2	dB
Efficiency²@ 910 MHz	67.0	%

Note: Measured in the DF2H0014-175DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on Pout. = 175W.