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Part Number	Package	Band(MHz)	Ppeak(W)	Pout(dBm)	Eff@Pout(%)	Power Gain(dB)	Status
DF2G0007-16N	DFN 6mm×5mm	30~700	16.0	40.5	67.0	18.8	Engineering Sample
DF1G0010-16N	DFN 6mm×5mm	20~1000	16.0	40.6	55.0	12.6	Engineering Sample
DXG1PH60B-10N2*	DFN 4mm×4mm	DC~6000	10.0	34.0	32.0	20.0	Released Product
DXG1PH22A-120N*	DFN 7mm×10mm	1805~2170	50.8	42.3	55.5	14.6	Released Product
DXG2PH27A-100N*	DFN 7mm×6.5mm	2496~2690	49.9	41.3	56.5	15.9	Released Product
DXG2PH36A-70N*	DFN 7mm×6.5mm	3300~3800	48.1	39.3	53.5	15.4	Released Product
DXG2PH36A-100N*	DFN 7mm×6.5mm	3300~3800	50.2	41.3	54.3	15.8	Released Product
DXG2PH50B-20N*	DFN 4mm×4.5mm	4400~5000	42.8	47.8	37.0	16.0	In Development
DXG2PH50A-90N*	DFN 7mm×6.5mm	4800~5000	49.6	41.3	48.3	12.5	In Development
DXG2PH60B-14N*	DFN 4mm×4.5mm	DC~6000	42.2	/	41.8	15.4	Released Product
DXG1PH60P-40N	DFN 7mm×6.5mm	DC~6000	46.3	33.0	31.7	21.3	Released Product
DXG1PH60P-60N*	DFN 7mm×6.5mm	DC~6000	47.8	40.0	55.0	19.5	Released Product

DF2G0007-16N

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	30	MHz
Frequency (Max.)	700	MHz
Supply Voltage (Typ.)	28	V
Psat @325MHz	41.1	dBm
Power Gain @ 325 MHz	19.4	dB
Efficiency @ 325 MHz	69.5	%

Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm，Pulse width = 100 μs, Duty cycle = 10 %.

DF1G0010-16N

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF1G0010-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	20	MHz
Frequency (Max.)	1000	MHz
Supply Voltage (Typ.)	28	V
Psat @325MHz (Typ.)	41.2	dBm
Power Gain @ 325 MHz	15	dB
Efficiency @ 325 MHz	72	%

Note: Measured in the DF1G0010-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Input signal is CW

DXG1PH60B-10N2*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	DC	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	40.3	dBm
Power Gain @ 3500 MHz	20.2	dB
Efficiency @ 3500 MHz	32.3	%

Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 30 mA.

DXG1PH22A-120N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用手冊(cè)

DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	1805	MHz
Frequency (Max.)	2170	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	50.8	dBm
Power Gain @ 2110 MHz	14.6	dB
Efficiency @ 2110 MHz	55.5	%
ACPR @ 2100 MHz	-35.0	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 120 mA, V_GSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH27A-100N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用方案
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	2496	MHz
Frequency (Max.)	2690	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	49.9	dBm
Power Gain @ 2600 MHz	15.9	dB
Efficiency @ 2600 MHz	56.5	%
ACPR @ 2600 MHz	-32.5	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 90 mA, V_GSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH36A-70N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用方案
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	3300	MHz
Frequency (Max.)	3800	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	48.1	dBm
Power Gain @ 3500 MHz	15.4	dB
Efficiency @ 3500 MHz	53.5	%
ACPR @ 3500 MHz	-31.0	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 60 mA, V_GSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH36A-100N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用方案
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax,which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	3300	MHz
Frequency (Max.)	3800	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	50.2	dBm
Power Gain @ 3500 MHz	15.8	dB
Efficiency @ 3500 MHz	54.3	%
ACPR @ 3500 MHz	-32.0	dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V,Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH50B-20N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用方案
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	4400	MHz
Frequency (Max.)	5000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	42.8	dBm
Power Gain @ 4900 MHz	16.0	dB
Efficiency @ 4900 MHz	47.8	%

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 30 mA, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH50A-90N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用方案
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	4800	MHz
Frequency (Max.)	5000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	49.6	dBm
Power Gain @ 4880 MHz	12.5	dB
Efficiency @ 4880 MHz	48.3	%
ACPR @ 4880 MHz	-32.0	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 60 mA, V_GSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2PH60B-14N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用方案
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	42.2	dBm
Power Gain @ 3500 MHz	15.4	dB
Efficiency @ 3500 MHz	41.8	%

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

DXG1PH60P-40N

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用方案
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	DC	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	46.3	dBm
Power Gain @ 1842 MHz	21.3	dB
Efficiency @ 1842 MHz	31.7	%
ACPR @ 1842 MHz	-41.0	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS= 48 V, I_DQA = 20 mA, V_GSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG1PH60P-60N*

Brief description for the product

數(shù)據(jù)手冊(cè)
應(yīng)用手冊(cè)
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	DC	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	47.8	dBm
Power Gain @ 1842 MHz	19.5	dB
Efficiency @ 1842 MHz	55.0	%
ACPR @ 1842 MHz	-30.0	dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: V_DS = 48 V, I_DQA = 45 mA, V_GSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.